MIT researchers have developed an innovative low-temperature growth technology to effectively integrate 2D materials, specifically transition metal dichalcogenides (TMDs), onto silicon chips, transforming semiconductor chip production. This method overcomes the challenge of typical high-temperature processes that can damage silicon because conventional semiconductor fabrication often requires temperatures around 600°C, while silicon circuits degrade above 400°C. Their approach allows for the direct growth of thin layers of TMD material, like molybdenum disulfide, on silicon circuits, leading to the potential for denser and more powerful chips. This new technology not only enhances uniformity and reduces growth time—from over a day to less than an hour for an entire 8-inch wafer—but also eliminates material transfer imperfections. The researchers designed a specialized furnace that enables TMDs to grow at a low temperature while preventing the degradation of the silicon beneath. This advancement is crucial for meeting the demands of emerging AI technologies that require advanced semiconductor capabilities. Future research aims to optimize this process further and explore its application for flexible surfaces, potentially allowing semiconductor integration into everyday items like clothing or notebooks, extending the capabilities of electronics.
