Researchers at the Daegu Gyeongbuk Institute of Science & Technology (DGIST) have developed a groundbreaking doping technology for semiconductor nanocrystals, enhancing their efficiency for modern electronics. Led by Professor Jiwoong Yang, the team discovered that controlling the doping process during the early growth stages of nanocrystals addresses key efficiency challenges. This innovation has implications for optoelectronic devices, including displays and transistors.
Collaborating with Professor Stefan Ringe from Korea University, the researchers found that doping mechanisms and locations vary with different dopant types. Their method targets the “nanocluster” phase, enabling stable and precise doping within ZnSe semiconductor nanocrystals, overcoming the prevalent issue of low doping efficiency in smaller semiconductors. Furthermore, this new approach eliminates the use of harmful heavy metals like Cadmium (Cd), thereby addressing environmental concerns while expanding practical applications.
Professor Yang emphasizes that this research lays the foundation for designing next-generation optoelectronic devices through precise doping control. Published in “Small Science,” the findings reflect support from multiple funding bodies and signify a significant advancement in semiconductor technology, poised to impact various electronic applications.
