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A research team from the University of Tokyo has achieved a significant breakthrough in spintronic technology by demonstrating the one-directional flow of spin-polarized current in a single-atom layer of thallium-lead alloys. This discovery, published in ACS Nano, contradicts prior beliefs that such thin layers would minimally interact with light, thereby offering innovative approaches for environmentally friendly data storage and ultra-thin spintronic devices.
The researchers, Ibuki Taniuchi, Ryota Akiyama, Rei Hobara, and Shuji Hasegawa, explored the circular photogalvanic effect (CPGE), where circularly polarized light induces a current flow in one direction, aligning electron spins accordingly. Conducting experiments in ultra-high vacuum conditions, they observed enhanced electronic properties in these thin alloys, indicating a control mechanism for spin-polarized currents.
This advancement in manipulating spin via light could revolutionize electronics, as conventional diodes become more complex with decreasing thickness. The team emphasizes the importance of basic research for future applications, suggesting the potential to use lower-energy lasers to enhance the efficiency of converting light to spin-polarized current. These findings pave the way for exciting developments in the realm of two-dimensional materials.
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